l outline v dss - 45v tsmt3 r ds(on) (max.) 190m w i d - 2.0a p d 1.0w l features l inner circuit 1) low on - resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt3). 4) pb-free lead plating ; rohs compliant l packaging specifications type packaging taping l application reel size (mm) 180 dc/dc converters tape width (mm) 8 basic ordering unit (pcs) 3,000 drain - source voltage v dss - 45 v taping code tl marking zh l absolute maximum ratings (t a = 25c) parameter symbol value unit continuous drain current i d *1 ? 2.0 a pulsed drain current i d,pulse *2 ? 8.0 a power dissipation gate - source voltage v gss ? 20 v p d *3 1.0 w p d *4 0.54 w junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c (1) (2) (3) * 1 body diode * 2 esd protection diode (1) gate (2) source (3) drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com RSR020P05 product specification dat asheet www.rohm.com ? 2012 rohm co., ltd. all rights reserved.
*1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 mounted on a seramic board (30300.8mm) *4 mounted on a fr4 (12200.8mm) *5 pulsed l thermal resistance parameter symbol values unit min. typ. max. r thja *4 - - 232 c/w r thja *3 - - 125 c/w thermal resistance, junction - ambient l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. v breakdown voltage temperature coefficient v (br)dss t j i d = - 1ma referenced to 25c - - 43 - mv/c drain - source breakdown voltage v (br)dss v gs = 0v, i d = - 1ma - 45 - - m a gate - source leakage current i gss v gs = ? 20v, v ds = 0v - - ? 10 m a zero gate voltage drain current i dss v ds = - 45v, v gs = 0v - - - 1 v gate threshold voltage temperature coefficient v (gs)th t j i d = - 1ma referenced to 25c - 3.2 - mv/c gate threshold voltage v gs (th) v ds = - 10v, i d = - 1ma - 1.0 - - 3.0 static drain - source on - state resistance r ds(on) *5 v gs = - 10v, i d = - 2.0a - 130 190 - 200 280 m w v gs = - 4.5v, i d = - 2.0a - 180 260 v gs = - 4.0v, i d = - 2.0a - 200 280 v gs = - 10v, i d = - 2.0a, t j =125c w transconductance g fs *5 v ds = - 10v, i d = - 2.0a 1.2 4.0 - s gate input resistannce r g f = 1mhz, open drain - 21 - RSR020P05 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
9.5 - l electrical characteristics (t a = 25c) parameter symbol conditions values turn - on delay time t d(on) *5 v dd ? - 25v, v gs = - 10v - 8 - l gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. pf output capacitance c oss v ds = - 10v - 80 - reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v - 500 - - 40 - ns rise time t r *5 i d = - 1.0a - 10 - turn - off delay time t d(off) *5 r l = 25 w - 35 - fall time t f *5 r g = 10 w - 10 - unit min. typ. max. - 1.6 - gate - drain charge q gd *5 - 1.2 - nc gate - source charge q gs *5 v dd ? - 25v, i d = - 2.0a v gs = - 10v total gate charge q g *5 v dd ? - 25v, i d = - 2.0a v gs = - 4.5v - 4.5 - v dd ? - 25v, i d = - 2.0a v gs = - 10v - l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. - - 1.2 v a inverse diode continuous, forward current i s *1 t a = 25c - - - 0.8 forward voltage v sd *5 v gs = 0v, i s = - 2.0a - RSR020P05 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
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